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1 The ALD Powerhouse

2 Picosun Defining the future of ALD Picosun s history and background date back to the very beginning of the field of atomic layer deposition. ALD was invented in Finland in 1974 by Dr. Tuomo Suntola, who today serves as Member of the Picosun Board of Directors. Picosun founder and Chief Technology Officer (CTO) Mr. Sven Lindfors has created outstanding ALD systems since 1975 and is known as the world s most experienced ALD reactor designer. SEMI organization President and CEO Stanley T. Myers presents the European SEMI 2004 award to Dr. Tuomo Suntola at Semicon Europa 2004 exhibition in Munich. 30 years exclusively on ALD Today Picosun combines over 30 years of continuous, exclusive ALD system development with over 200 person years of first hand know-how in the field. The company was established in 2003 and our core team consists of highly trained academic personnel, all experts in ALD. Picosun team, described by many as the best ALD team ever, has contributed to over 100 patents on ALD and our close collaboration with top research organizations and major industries solidifies our frontline position in the global ALD network. Unique scalability from research to production Picosun is an international equipment manufacturer with a world-wide sales and service organization. We develop and manufacture ALD reactors for all kinds of micro- and nanotechnology applications. Picosun provides its customers with user-friendly, reliable and productive ALD process tools with top level after-sales, demo coating and process consulting services. The company is based in Espoo, Finland and has its US headquarters in Detroit. SUNALE ALD systems are used by leading scientific institutions and companies across four continents. We get it right Picosun Board of Directors. Back row, from left to right: Prof. Lauri Niinistö, Mr. Kustaa Poutiainen (CEO), Prof. Jorma Routti, and Mr. Juhana Kostamo (Managing Director). Front row, from left to right: Dr. Tuomo Suntola and Mr. Sven Lindfors (CTO). What makes us special in the field is our exclusive focus on ALD. We get it right, where many just struggle. We understand the customer s needs and can offer unmatched quality coating solutions that fulfill even the most stringent research and productivity requirements. With our uniquely compact, upscalable and versatile reactor design, there is no hindrance to the transition from research to industrial production.

3 ALD Winner technology for thin films As a surface controlled, self-limiting chemical vapor processing method, ALD ensures 100 % uniform, conformal, defect and pinhole free thin film growth on even the most challenging nanoscale architectures such as ultra-high aspect ratio trenches and high tortuosity through-porous samples. Wide range of e.g. metal oxide, nitride, sulfide, fluoride and pure metal coatings as well as nanolaminates, mixed oxide and doped thin films can be used in numerous applications for example in micro- and optoelectronics, optics, catalyst manufacturing, clean and renewable energy technologies, water purification and innovative packaging materials. Examples of ALD Applications Material Aluminum oxide, Al 2 O 3 Tin dioxide, SnO 2 Titanium dioxide, TiO 2 Vanadium oxides, V 2 O 5 and VO 2 Zinc oxide, ZnO Titanium nitride, TiN Applications MEMS coatings, passivation coatings, insulator layers, diffusion barriers, etch stop layers Optoelectronics, gas sensors, antistatic coatings, ARC Photocatalytic coatings, photovoltaics, antistatic coatings Catalyst coatings, optical switching materials, energy storage Semiconductor materials, buffer layers in solar cells, UV blocking layers Metal electrodes, diffusion barriers Tantalum nitride, Ta 3 N 5 Hafnium dioxide, HfO 2 High-k dielectrics Zirconium dioxide, ZrO 2 Iridium, Ir Platinum, Pt Ruthenium, Ru Metal electrodes

4 SUNALE P-SERIES ALD process tools Fully automatic single wafer and batch processes for high-volume manufacturing With Picosun s SUNALE P-series, the results achieved and demonstrated with R-series can be transferred straight to high volume industrial production. Fast, safe, reliable, fully automated production line and/or vacuum cluster compatible system ensures maximum, cost-efficient throughput under all conditions. Our unmatched level of knowhow on ALD process mechanics ensures that production progresses smoothly with even the most challenging precursor chemistries and substrate architectures, consistently offering excellent particle level, uniformity and repeatability results. Picture VTT 2010 Our compact, highly functional reactor design saves expensive facility space whereas quick and easy maintenance results in minimal system downtime. Picosun s top quality support organization is always ready to offer on- or off-site consulting from process chemistry to maintenance and customization of the SUNALE reactors. Prior to purchase, our demo service ensures the reactor is optimized for 100 % fulfillment of your most demanding production requirements. Mean thickness (Å) % standard deviation Mean % stdev Wafer/slot number Examples of film thickness repeatability. TMA + H 2 O process, NUw2w = %. 49 pts measurement on 6 Si wafers, 25 wafer batch. Picosun customer data. 200 MM WAFER BATCH RESULTS 100 C 200 C 275 C 1sigma non-uniformity W-I-W 1.36% 1.14% 0.86% 1sigma repeatability W-T-W 1.90% 1.02% 0.68% Film uniformity and repeatability results. 100 nm Al 2 O 3 deposition on a 25 pcs Si wafer batch. Picosun customer data.

5 SUNALE P-SERIES technical features Basic features Substrate size and type Up to 300 mm single wafers Up to 300 mm wafer batches 156 mm x 156 mm solar Si wafers 3D objects Powders and particles Process temperature C Substrate loading options Precursors Measures Weight Dimensions (W x H x D) Utilities Power supply Vacuum pump Carrier gas Compressed dry air Cooling water Exhausts Pneumatic loader, robotic loader Liquid, solid, gas, ozone Level sensors, cleaning and refill service Up to 12 sources with 4 separate inlets 700 kg 149 cm x 191 cm x 111 cm 400 VAC, 3 phase, 50/60 Hz, Fuse 3 x 16 Amps. Power depending on options. Recommendation min. 420 m 3 /h, mechanical particle trap % N 2 / Ar, min 2 slm 5 6 bar overpressure Only required for the dry vacuum pump and ozone generator, not for the reactor Vacuum pump, source cabinets Options Cassette loading module, gas scrubber, factory host software connectivity

6 The ALD Powerhouse